TW227073B - - Google Patents

Info

Publication number
TW227073B
TW227073B TW081103995A TW81103995A TW227073B TW 227073 B TW227073 B TW 227073B TW 081103995 A TW081103995 A TW 081103995A TW 81103995 A TW81103995 A TW 81103995A TW 227073 B TW227073 B TW 227073B
Authority
TW
Taiwan
Application number
TW081103995A
Other languages
Chinese (zh)
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Application granted granted Critical
Publication of TW227073B publication Critical patent/TW227073B/zh

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • G11C16/30Power supply circuits
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
TW081103995A 1991-02-07 1992-05-22 TW227073B (en])

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/651,817 US5197029A (en) 1991-02-07 1991-02-07 Common-line connection for integrated memory array

Publications (1)

Publication Number Publication Date
TW227073B true TW227073B (en]) 1994-07-21

Family

ID=24614345

Family Applications (1)

Application Number Title Priority Date Filing Date
TW081103995A TW227073B (en]) 1991-02-07 1992-05-22

Country Status (5)

Country Link
US (1) US5197029A (en])
EP (1) EP0498336A1 (en])
JP (1) JPH06181297A (en])
KR (1) KR100242683B1 (en])
TW (1) TW227073B (en])

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2624864B2 (ja) * 1990-02-28 1997-06-25 株式会社東芝 不揮発性半導体メモリ
JP3002309B2 (ja) * 1990-11-13 2000-01-24 ウエハスケール インテグレーション, インコーポレイテッド 高速epromアレイ
US5719806A (en) * 1991-02-18 1998-02-17 Yamane; Masatoshi Memory cell array
JPH07147095A (ja) * 1993-03-31 1995-06-06 Sony Corp 半導体不揮発性記憶装置およびデコーダ回路
US5440513A (en) * 1993-05-03 1995-08-08 Motorola Inc. SRAM with programmable preset data
US5777922A (en) * 1996-10-18 1998-07-07 Hyudai Electronics Industries Co., Ltd. Flash memory device
JP3606231B2 (ja) 2001-05-31 2005-01-05 セイコーエプソン株式会社 不揮発性半導体記憶装置
US6556503B2 (en) 2001-08-21 2003-04-29 Micron Technology, Inc. Methods and apparatus for reducing decoder area
WO2012068664A1 (en) * 2010-11-23 2012-05-31 Mosaid Technologies Incorporated Method and apparatus for sharing internal power supplies in integrated circuit devices
US9779796B1 (en) * 2016-09-07 2017-10-03 Micron Technology, Inc. Redundancy array column decoder for memory

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57186289A (en) * 1981-05-13 1982-11-16 Hitachi Ltd Semiconductor memory
JPS639097A (ja) * 1986-06-30 1988-01-14 Sony Corp スタテイツクram
US4975877A (en) * 1988-10-20 1990-12-04 Logic Devices Incorporated Static semiconductor memory with improved write recovery and column address circuitry
JP2582439B2 (ja) * 1989-07-11 1997-02-19 富士通株式会社 書き込み可能な半導体記憶装置

Also Published As

Publication number Publication date
US5197029A (en) 1993-03-23
JPH06181297A (ja) 1994-06-28
EP0498336A1 (en) 1992-08-12
KR100242683B1 (ko) 2000-03-02
KR920017119A (ko) 1992-09-26

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees